Simulation of High Performance Quantum Well GaN-based LED
The performance of quantum well GaN/A1GaN light emitting diode (LED) is reviewed for three different barrier compositions; symmetric barrier composition with low A1 content, asymmetric barrier composition with higher A1 content on p-type cladding layer and lower A1 content on n-type clading layer, a...
| Main Authors: | , , , |
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| Formato: | Conference or Workshop Item |
| Idioma: | English |
| Publicado em: |
2005
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| Assuntos: | |
| Acesso em linha: | http://eprints.usm.my/131/1/Stimulation_Of_High_Performance_quantum_well_GaN_-Based_Led.pdf |