Physical Characteristics Of Sol-gel Derived SiO2 Thick Film on 4H-SiC.
The excellent properties of SiC have led to the usage of this material as a substrate for high power, high temperature, and high frequency metal-oxide-semiconductor (MOS)-based device applications [1,2,3].
| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2007
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| Subjects: | |
| Online Access: | http://eprints.usm.my/13614/1/Physical_characteristics.pdf |
| Summary: | The excellent properties of SiC have led to the usage of this material as a substrate for high power, high temperature, and high frequency metal-oxide-semiconductor (MOS)-based device applications [1,2,3]. |
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