Red Emission Of Thin Film Electroluminescent Device Based On p-GaN.
High quality GaN layers doped with Mg were grown on Si(111) substrates using high temperature AlN as buffer layer by using radio-frequency molecular beam epitaxy (RF-MBE).
| Asıl Yazarlar: | , , |
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| Materyal Türü: | Conference or Workshop Item |
| Dil: | English |
| Baskı/Yayın Bilgisi: |
2007
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| Konular: | |
| Online Erişim: | http://eprints.usm.my/14830/1/paper6.pdf |