Red Emission Of Thin Film Electroluminescent Device Based On p-GaN.
High quality GaN layers doped with Mg were grown on Si(111) substrates using high temperature AlN as buffer layer by using radio-frequency molecular beam epitaxy (RF-MBE).
| Main Authors: | , , |
|---|---|
| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2007
|
| Subjects: | |
| Online Access: | http://eprints.usm.my/14830/1/paper6.pdf |
| _version_ | 1797005389675364352 |
|---|---|
| author | L, S Chuah Hassan, Z Abu Hassan, H |
| author_facet | L, S Chuah Hassan, Z Abu Hassan, H |
| author_sort | L, S Chuah |
| collection | USM |
| description | High quality GaN layers doped with Mg were grown on Si(111) substrates using high temperature AlN as buffer layer by using radio-frequency molecular beam epitaxy (RF-MBE). |
| first_indexed | 2024-03-06T14:09:46Z |
| format | Conference or Workshop Item |
| id | usm.eprints-14830 |
| institution | Universiti Sains Malaysia |
| language | English |
| last_indexed | 2024-03-06T14:09:46Z |
| publishDate | 2007 |
| record_format | dspace |
| spelling | usm.eprints-148302013-07-13T05:45:00Z http://eprints.usm.my/14830/ Red Emission Of Thin Film Electroluminescent Device Based On p-GaN. L, S Chuah Hassan, Z Abu Hassan, H QC1 Physics (General) High quality GaN layers doped with Mg were grown on Si(111) substrates using high temperature AlN as buffer layer by using radio-frequency molecular beam epitaxy (RF-MBE). 2007 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/14830/1/paper6.pdf L, S Chuah and Hassan, Z and Abu Hassan, H (2007) Red Emission Of Thin Film Electroluminescent Device Based On p-GaN. In: Proceeding Of Malaysia-Japan International Symposium On Advanced Technology 2007 (MJISAT 2007), 12-15 November 2007, Seri Pacific Hotel, Kuala Lumpur. |
| spellingShingle | QC1 Physics (General) L, S Chuah Hassan, Z Abu Hassan, H Red Emission Of Thin Film Electroluminescent Device Based On p-GaN. |
| title | Red Emission Of Thin Film Electroluminescent Device Based On p-GaN.
|
| title_full | Red Emission Of Thin Film Electroluminescent Device Based On p-GaN.
|
| title_fullStr | Red Emission Of Thin Film Electroluminescent Device Based On p-GaN.
|
| title_full_unstemmed | Red Emission Of Thin Film Electroluminescent Device Based On p-GaN.
|
| title_short | Red Emission Of Thin Film Electroluminescent Device Based On p-GaN.
|
| title_sort | red emission of thin film electroluminescent device based on p gan |
| topic | QC1 Physics (General) |
| url | http://eprints.usm.my/14830/1/paper6.pdf |
| work_keys_str_mv | AT lschuah redemissionofthinfilmelectroluminescentdevicebasedonpgan AT hassanz redemissionofthinfilmelectroluminescentdevicebasedonpgan AT abuhassanh redemissionofthinfilmelectroluminescentdevicebasedonpgan |