Silicon n-Channel Metal Oxide Semiconductor Field Effect Transistor Fabrication And Its Effect On Output Characteristics
n-channel metal oxide semiconductor field effect transistor (n-MOSFET) fabrication requires specialized and expensive technologies such as ion implantation, chemical vapor deposition (CVD) and hazardous gases such as silane (SiH4), HCl and hydrogen. Low cost emulsion photomask with 35 μm channel...
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| Format: | Thesis |
| Language: | English |
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2012
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| Online Access: | http://eprints.usm.my/29062/1/SILICON_n-CHANNEL_METAL_OXIDE_SEMI_CONDUCTOR_FIELD_EFFECT_TRANSISTOR_FABRICATION__AND_ITS_EFFECT_ON_OUTPUT_CHARACTERISTICS.pdf |