Study Of Cubic GaN On Porous GaAs Substrate For High Efficient Energy Devices.

Study Of Cubic GaN On Porous GaAs Substrate For High Efficient Energy Devices.

Projek ini bermula dengan pembikinan struktur GaAs (100) berliang menggunakan larutan punaran H2S04: DMF dengan nisbah optimum 1 :3. Liang yang berbentuk bulat dengan keseragaman tinggi telah diperolehi berbanding dengan larutan punaran lain. Sam pel GaAs berliang tersebut sepatutnya digunakan untuk...

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Bibliographic Details
Main Author:	Zainal, Norzaini
Format:	Monograph
Published:	Universiti Sains Malaysia 2016
Subjects:	QC1-999 Physics

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