High Sensitivity of Porous Si-Doped GaN MSM Photodetector using Thermally Untreated Platinum Contact
this work. we report the formation of porous Si-doped GaN films under a novel alternating current (sine-wave a.c. (50 Hz)) photo-assisted electrochemical (ACPEC) etching conditions. The ACPEC formed porous GaN with excellent structural and surface morphology. Field emission scanning electron micr...
| Príomhchruthaitheoirí: | , , , , , |
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| Formáid: | Conference or Workshop Item |
| Teanga: | English |
| Foilsithe / Cruthaithe: |
2015
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| Ábhair: | |
| Rochtain ar líne: | http://eprints.usm.my/34098/1/Section%20C%20149.pdf |