High Sensitivity of Porous Si-Doped GaN MSM Photodetector using Thermally Untreated Platinum Contact

High Sensitivity of Porous Si-Doped GaN MSM Photodetector using Thermally Untreated Platinum Contact

this work. we report the formation of porous Si-doped GaN films under a novel alternating current (sine-wave a.c. (50 Hz)) photo-assisted electrochemical (ACPEC) etching conditions. The ACPEC formed porous GaN with excellent structural and surface morphology. Field emission scanning electron micr...

Szczegółowa specyfikacja

Opis bibliograficzny
Główni autorzy:	Mahmood, Ainorkhilah, Hassan, Zainuriah, Ahmed, Naser M, Yusof, Yushamdan, Yam, Fong Kwong, Chuah, Lee Siang
Format:	Conference or Workshop Item
Język:	English
Wydane:	2015
Hasła przedmiotowe:	QC Physics
Dostęp online:	http://eprints.usm.my/34098/1/Section%20C%20149.pdf

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