Brief: fabrication processes of silicon-on-insulator and Lateral bipolar transistors

Silicon on Insulator (SOI) has long been the forerunner of the CMOS technology in the last decade offering superior CMOS with higher speed, higher density, and excellent radiation hardness and reduced second order effects for submicron VLSI applications. The traditional SOI structure consists of...

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Main Authors:	S Hamad, Osama, Sidek, Othman, Rehman, Mahfoozur, Ibrahim, Kamarulazizi, H.Mourad, Magdy
Format:	Conference or Workshop Item
Language:	English
Published:	2008
Subjects:	TH1-9745 Building construction
Online Access:	http://eprints.usm.my/34464/1/HBP20.pdf

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author	S Hamad, Osama Sidek, Othman Rehman, Mahfoozur Ibrahim, Kamarulazizi H.Mourad, Magdy
author_facet	S Hamad, Osama Sidek, Othman Rehman, Mahfoozur Ibrahim, Kamarulazizi H.Mourad, Magdy
author_sort	S Hamad, Osama
collection	USM
description	Silicon on Insulator (SOI) has long been the forerunner of the CMOS technology in the last decade offering superior CMOS with higher speed, higher density, and excellent radiation hardness and reduced second order effects for submicron VLSI applications. The traditional SOI structure consists of a silicon dioxide layer sandwiched between a top thin silicon layer in which devices are built and the silicon substrate. Silicon-On-Insulator materials differ from normal bulk in that an insulating layer is present underneath the active device layer. The formation of a device quality single crystal silicon layer on top of the insulator is not a simple task. Over the years, various methods have been developed and they are briefly described in this paper. However, the purpose of this paper is to review the fabrication process of bipolar junction transistors (BJT) on thin film Silicon on Insulator (TFSOI) wafer. As results, it can be concluded that fabricating, the base, emitter and collector regions of bipolar transistors will be accessible at the top surface of thin film silicon on insulator substrate. Additionally, fabrication bipolar junction transistors by using planar process easier to be made inside laboratory’s school of physics USM.
first_indexed	2024-03-06T15:02:37Z
format	Conference or Workshop Item
id	usm.eprints-34464
institution	Universiti Sains Malaysia
language	English
last_indexed	2024-03-06T15:02:37Z
publishDate	2008
record_format	dspace
spelling	usm.eprints-344642017-05-23T00:24:33Z http://eprints.usm.my/34464/ Brief: fabrication processes of silicon-on-insulator and Lateral bipolar transistors S Hamad, Osama Sidek, Othman Rehman, Mahfoozur Ibrahim, Kamarulazizi H.Mourad, Magdy TH1-9745 Building construction Silicon on Insulator (SOI) has long been the forerunner of the CMOS technology in the last decade offering superior CMOS with higher speed, higher density, and excellent radiation hardness and reduced second order effects for submicron VLSI applications. The traditional SOI structure consists of a silicon dioxide layer sandwiched between a top thin silicon layer in which devices are built and the silicon substrate. Silicon-On-Insulator materials differ from normal bulk in that an insulating layer is present underneath the active device layer. The formation of a device quality single crystal silicon layer on top of the insulator is not a simple task. Over the years, various methods have been developed and they are briefly described in this paper. However, the purpose of this paper is to review the fabrication process of bipolar junction transistors (BJT) on thin film Silicon on Insulator (TFSOI) wafer. As results, it can be concluded that fabricating, the base, emitter and collector regions of bipolar transistors will be accessible at the top surface of thin film silicon on insulator substrate. Additionally, fabrication bipolar junction transistors by using planar process easier to be made inside laboratory’s school of physics USM. 2008-12 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/34464/1/HBP20.pdf S Hamad, Osama and Sidek, Othman and Rehman, Mahfoozur and Ibrahim, Kamarulazizi and H.Mourad, Magdy (2008) Brief: fabrication processes of silicon-on-insulator and Lateral bipolar transistors. In: 2nd International Conference on Built Environment in Developing Countries., 3rd- 4th December 2008, Universiti Sains Malaysia, Pulau Pinang.
spellingShingle	TH1-9745 Building construction S Hamad, Osama Sidek, Othman Rehman, Mahfoozur Ibrahim, Kamarulazizi H.Mourad, Magdy Brief: fabrication processes of silicon-on-insulator and Lateral bipolar transistors
title	Brief: fabrication processes of silicon-on-insulator and Lateral bipolar transistors
title_full	Brief: fabrication processes of silicon-on-insulator and Lateral bipolar transistors
title_fullStr	Brief: fabrication processes of silicon-on-insulator and Lateral bipolar transistors
title_full_unstemmed	Brief: fabrication processes of silicon-on-insulator and Lateral bipolar transistors
title_short	Brief: fabrication processes of silicon-on-insulator and Lateral bipolar transistors
title_sort	brief fabrication processes of silicon on insulator and lateral bipolar transistors
topic	TH1-9745 Building construction
url	http://eprints.usm.my/34464/1/HBP20.pdf
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Brief: fabrication processes of silicon-on-insulator and Lateral bipolar transistors

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