A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices
This study examined AlxGa1-xN alloys grown on Si substrate for UVphotodetectors and transistors applications. Radio-frequency (RF) nitrogen plasmaassisted molecular beam epitaxy (PA-MBE) technique was used to grow AlxGaxN/GaN/AlN thin films on the Si(111) substrates. Undoped and n-type Si-doped samp...
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| Format: | Thesis |
| Language: | English |
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2011
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| Online Access: | http://eprints.usm.my/41621/1/ASAAD_SHAKIR_HUSSEIN.pdf |