A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices
This study examined AlxGa1-xN alloys grown on Si substrate for UVphotodetectors and transistors applications. Radio-frequency (RF) nitrogen plasmaassisted molecular beam epitaxy (PA-MBE) technique was used to grow AlxGaxN/GaN/AlN thin films on the Si(111) substrates. Undoped and n-type Si-doped samp...
| Main Author: | |
|---|---|
| Format: | Thesis |
| Language: | English |
| Published: |
2011
|
| Subjects: | |
| Online Access: | http://eprints.usm.my/41621/1/ASAAD_SHAKIR_HUSSEIN.pdf |
| _version_ | 1797010666376134656 |
|---|---|
| author | Hussein, Asaad Shakir |
| author_facet | Hussein, Asaad Shakir |
| author_sort | Hussein, Asaad Shakir |
| collection | USM |
| description | This study examined AlxGa1-xN alloys grown on Si substrate for UVphotodetectors and transistors applications. Radio-frequency (RF) nitrogen plasmaassisted molecular beam epitaxy (PA-MBE) technique was used to grow AlxGaxN/GaN/AlN thin films on the Si(111) substrates. Undoped and n-type Si-doped samples of AlxGa1-xN with different Al-mole fractions were successfully grown.
Reflection high energy electron diffraction (RHEED), scanning electron microscopy (SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM), high-resolution X-ray diffraction (HR-XRD), photoluminescence (PL), |
| first_indexed | 2024-03-06T15:23:07Z |
| format | Thesis |
| id | usm.eprints-41621 |
| institution | Universiti Sains Malaysia |
| language | English |
| last_indexed | 2024-03-06T15:23:07Z |
| publishDate | 2011 |
| record_format | dspace |
| spelling | usm.eprints-416212019-04-12T05:26:32Z http://eprints.usm.my/41621/ A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices Hussein, Asaad Shakir QC1 Physics (General) This study examined AlxGa1-xN alloys grown on Si substrate for UVphotodetectors and transistors applications. Radio-frequency (RF) nitrogen plasmaassisted molecular beam epitaxy (PA-MBE) technique was used to grow AlxGaxN/GaN/AlN thin films on the Si(111) substrates. Undoped and n-type Si-doped samples of AlxGa1-xN with different Al-mole fractions were successfully grown. Reflection high energy electron diffraction (RHEED), scanning electron microscopy (SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM), high-resolution X-ray diffraction (HR-XRD), photoluminescence (PL), 2011-07 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/41621/1/ASAAD_SHAKIR_HUSSEIN.pdf Hussein, Asaad Shakir (2011) A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices. PhD thesis, Universiti Sains Malaysia. |
| spellingShingle | QC1 Physics (General) Hussein, Asaad Shakir A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices |
| title | A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices |
| title_full | A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices |
| title_fullStr | A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices |
| title_full_unstemmed | A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices |
| title_short | A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices |
| title_sort | a1gan thin films on silicon substrates for photodetector and transistor devices |
| topic | QC1 Physics (General) |
| url | http://eprints.usm.my/41621/1/ASAAD_SHAKIR_HUSSEIN.pdf |
| work_keys_str_mv | AT husseinasaadshakir a1ganthinfilmsonsiliconsubstratesforphotodetectorandtransistordevices |