DC And RF Characterization Of n-GaN Schottky Diode For Microwave Application
Gallium nitride is a promising wide bandgap semiconductor material for high-power, high temperature and high frequency device applications. However, there are still a number of factors that are limiting the material to reach a satisfactory device performance. Among them the most important and critic...
| Հիմնական հեղինակ: | |
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| Ձևաչափ: | Թեզիս |
| Լեզու: | English |
| Հրապարակվել է: |
2011
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| Խորագրեր: | |
| Առցանց հասանելիություն: | http://eprints.usm.my/42797/1/TARIQ_MUNIR.pdf |