Polycrystalline GaN Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector
This thesis describes work on depositing polycrystalline gallium nitride (GaN) on m-plane sapphire substrate using cost effective physical deposition technique; electron beam (e-beam) evaporator and radio frequency (RF) sputtering, followed by annealing treatment in ammonia (NH3) ambient. The work w...
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| Format: | Thesis |
| Language: | English |
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2017
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| Online Access: | http://eprints.usm.my/42902/1/AZHARUL_ARIFF__KAMARULZAMAN.pdf |