Polycrystalline GaN Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector

Polycrystalline GaN Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector

This thesis describes work on depositing polycrystalline gallium nitride (GaN) on m-plane sapphire substrate using cost effective physical deposition technique; electron beam (e-beam) evaporator and radio frequency (RF) sputtering, followed by annealing treatment in ammonia (NH3) ambient. The work w...

Full description

Bibliographic Details
Main Author:	Kamarulzaman, Azharul Ariff
Format:	Thesis
Language:	English
Published:	2017
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/42902/1/AZHARUL_ARIFF__KAMARULZAMAN.pdf

Similar Items

Characterization of AlInN layer grown on GaN/Sapphire substrate by MOCVD
by: Wei-Ching Huang,, et al.
Published: (2013)

Embedded AlN/GaN multi-layer for enhanced crystal quality and surface morphology of semi-polar (11-22) GaN on m-plane sapphire
by: Omar, Al-Zuhairi, et al.
Published: (2018)

Self-powered action in metal-semiconductor-metal ultraviolet photodetectors based on AlGaN/GaN high electron mobility transistor structures on different substrates
by: Razeen, Ahmed S., et al.
Published: (2024)

Surface and optical characteristics of polycrystalline GaN layer with different pores profile of porous GaAs/GaAs substrate
by: Md Taib, Muhamad Ikram, et al.
Published: (2019)

Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology
by: Azman, Adreen, et al.
Published: (2018)

Electrical characterisation of GaN-based metal semiconductor contacts
by: Lee, Kenneth Jia De.
Published: (2010)

Effect of low NH3 flux towards high quality semi-polar (11-22) GaN on m-plane sapphire via MOCVD
by: Omar, Al-Zuhairi, et al.
Published: (2018)

Studies of Gallium Nitride Electron Mobility Transistors (GaN HEMTs) and GaN Metal-Insulator-Semiconductor (GaN MISHEMT)
by: Lau, Sien Hui
Published: (2020)

Effect of thermal interaction between bulk GaN substrates and corral sapphire on blue light emission InGaN/GaN multi-quantum wells by MOCVD
by: Sivanathan, P.C., et al.
Published: (2018)

Enhanced performance of metal-semiconductor-metal UV photodetectors on Algan/Gan Hemt structure via periodic nanohole patterning
by: Razeen, Ahmed S., et al.
Published: (2024)

A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices
by: Hussein, Asaad Shakir
Published: (2011)

Metal-semiconductor-metal photodetectors on a GeSn-on-insulator platform for 2 m applications
by: Son, Bongkwon, et al.
Published: (2022)

The sensing performance of undoped-AlGaN/GaN/sapphire HEMT hydrogen gas sensor
by: Mohamad, Mazuina, et al.
Published: (2008)

Electrical and structural characterization of GaN based semiconductor layers
by: Lee, Pui Ki.
Published: (2011)

Simulation And Fabrication Of Ge Islands On Si Metal-Semiconductor-Metal Photodetectors
by: Sarmast, Hadi Mahmodi Sheikh
Published: (2010)

Photoelectric properties of metal-semiconductor-metal photodetector based on porous silicon
by: Al-Jumaili, Batool Eneaze Bandar, et al.
Published: (2016)

Quantum dot-doped porous silicon metal–semiconductor metal photodetector
by: Hsiao, Vincent K. S., et al.
Published: (2014)

The Growth Of Highly Doped p-GaN On Sapphire By RF Plasma-Assisted Molecular Beam Epitaxy.
by: C, W Chin, et al.
Published: (2007)

GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates
by: Deki, M., et al.
Published: (2019)

Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon
by: Ye, G., et al.
Published: (2014)

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes
by: Kyaw, Zabu, et al.
Published: (2014)

Metal-semiconductor-metal GeSn photodetectors on silicon for short-wave infrared applications
by: Ghosh, Soumava, et al.
Published: (2020)

Positioning of periodic AlN/GaN multilayers: Effect on crystalline quality of a-plane GaN
by: Kamarudzaman, Anas, et al.
Published: (2020)

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
by: Sun, Xiaowei, et al.
Published: (2013)

AlGaN/GaN HEMT-based ultraviolet photodetectors with enhanced device efficiency
by: Ahmed Salah Hawash Razeen
Published: (2024)

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata
by: Zhang, Zi-Hui, et al.
Published: (2013)

Demonstration of submicron-gate AlGaN/GaN high-electron-mobility transistors on silicon with complementary metal-oxide-semiconductor-compatible non-gold metal stack
by: Arulkumaran, Subramaniam, et al.
Published: (2015)

Modulation of light absorption in flexible GeSn metal–semiconductor–metal photodetectors by mechanical bending
by: An, Shu, et al.
Published: (2021)

AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 V and a complementary metal–oxide–semiconductor compatible gold-free process
by: Liu, Xinke, et al.
Published: (2013)

AlGaN/GaN-on-silicon metal–oxide–semiconductor high-electron-mobility transistor with breakdown voltage of 800 V and on-state resistance of 3 mΩ·cm2 using a complementary metal–oxide–semiconductor compatible gold-free process
by: Yeo, Yee-Chia, et al.
Published: (2013)

Characterization of GaN-based semiconductor materials for device applications
by: Ng, Yao Heng.
Published: (2009)

On-chip NADH detection in multicellular models using an AlGaN/GaN photodetector array with enhanced sensitivity
by: Xiong, Zhongshu, et al.
Published: (2025)

PA-MBE GaN-Based Optoelectronics on Silicon Substrates
by: Chuah , Lee Siang
Published: (2009)

Study Of Cubic GaN On Porous GaAs Substrate For High Efficient Energy Devices.
by: Zainal, Norzaini
Published: (2016)

Metallic structures for photodetector application
by: Lam, Zhao Meng
Published: (2020)

Electrical characterization of GaN-based layer structures
by: Firdous Banu
Published: (2011)

GaN based layer structures for sensor application
by: Pradeep, Ramalingam
Published: (2016)

A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on gan grown on silicon.
by: Y, C.Lee, et al.
Published: (2000)

Characterization and fabrication of InGaN/GaN MQWs and LEDs on macroporous Si substrate
by: Dang, Dominic Thor Weng
Published: (2011)

Standard pressure deposition of crack-free AlN buffer layer grown on c-plane sapphire by PALE technique via MOCVD
by: Abd Rahman, Mohd Nazri, et al.
Published: (2018)