Properties of p-GaN Layer on Different Nitride Surfaces
Achieving high-quality p-type GaN (p-GaN) layer is crucial for development of nitrides-based optoelectronic and power devices like as light-emitting diodes (LEOs). laser, transistor and so forth. Although, nitride based devices are commonly grown on foreign substrates e.g. sapphire, growing the n...
| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2015
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| Subjects: | |
| Online Access: | http://eprints.usm.my/48437/1/Section%20C%20154.pdf%20cut.pdf |