The Growth Of Aln Single Layer On Sapphire At Low Pressure Using Metalorganic Chemical Vapor Deposition (MOCVD)

The Growth Of Aln Single Layer On Sapphire At Low Pressure Using Metalorganic Chemical Vapor Deposition (MOCVD)

In this work, AlN single layer has been successfully grown on c-plane sapphire using metalorganic chemical vapor deposition (MOCVD) at low reactor pressure. The effects of growth temperature, ammonia (NH3) flux and trimethylaluminum (TMAl) flux towards AlN growth were investigated. It was noted that...

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Bibliographic Details
Main Authors: Sahar, Mohd Ann Amirul Zulffiqal Md, Hassan, Zainuriah, Way, Foong Lim, Samsudin, M. E. A., Hanafiah, A. M., Yusuf, Yusnizam, Ahmad, M. A., Hamzah, Nur Atiqah, Asri, Rahil Izzati Mohd
Format: Conference or Workshop Item
Language:English
Published: 2019
Subjects:
QC1-999 Physics
Online Access:http://eprints.usm.my/48843/1/ICoSeMT%202019%20ABSTRACT%20BOOK%20108.pdf

Internet

http://eprints.usm.my/48843/1/ICoSeMT%202019%20ABSTRACT%20BOOK%20108.pdf

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