Influence Of Etching Time On The Porous P-Type Gallium Nitride Using Alternating Current Photo-Assisted Electrochemical Etching Technique
The theoretical and experimental study of porous p-type gallium nitride (GaN) is discussed in this work. Porous p-type GaN was adequately fabricated using alternating current photo-assisted electrochemical etching technique with various etching times (10, 20, 30, and 60 minutes) in mixed hydrofluori...
| Main Authors: | , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2020
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| Subjects: | |
| Online Access: | http://eprints.usm.my/48955/1/MNRG_ZH03.pdf |