Effect Of Nucleation Time On GaN Layer Grown On Different Shape Of Patterned Sapphire Substrate
This work describes the effect of nucleation time on GaN layer; which was grown separately on three different shape of patterned sapphire substrate (PSS); cone PSS and dome PSS. Prior to the GaN layer growth, a low temperature of GaN nucleation layer was initially grown at 40, 80 and 160 second. Th...
Main Authors: | , , |
---|---|
Format: | Conference or Workshop Item |
Language: | English |
Published: |
2020
|
Subjects: | |
Online Access: | http://eprints.usm.my/49045/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2050.pdf |