Effect Of Nucleation Time On GaN Layer Grown On Different Shape Of Patterned Sapphire Substrate
This work describes the effect of nucleation time on GaN layer; which was grown separately on three different shape of patterned sapphire substrate (PSS); cone PSS and dome PSS. Prior to the GaN layer growth, a low temperature of GaN nucleation layer was initially grown at 40, 80 and 160 second. Th...
| Main Authors: | , , |
|---|---|
| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2020
|
| Subjects: | |
| Online Access: | http://eprints.usm.my/49045/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2050.pdf |
| _version_ | 1797012122068058112 |
|---|---|
| author | Taib, Muhamad Ikram Md Zaini, Siti Nurul Waheeda Mohmad Zainal, Norzaini |
| author_facet | Taib, Muhamad Ikram Md Zaini, Siti Nurul Waheeda Mohmad Zainal, Norzaini |
| author_sort | Taib, Muhamad Ikram Md |
| collection | USM |
| description | This work describes the effect of nucleation time on GaN layer; which was grown separately on three different shape of patterned sapphire substrate (PSS); cone PSS
and dome PSS. Prior to the GaN layer growth, a low temperature of GaN nucleation layer was initially grown at 40, 80 and 160 second. The nucleation islands became larger as the nucleation time was longer. Bigger islands promote better coalescence, while smaller islands
showed otherwise. Besides, the GaN layer grown on bigger islands exhibit smoother surface. From XRD measurement, FWHM of the GaN peak decreased for longer nucleation time, indicating the benefit of bigger islands to reduce the dislocations in the layer through better coalescence. It was found that the GaN layer grown on dome-patterned substrate exhibits better quality than the one on cone-patterned substrate. The growth of GaN layer on flat sapphire was also performed for comparison. |
| first_indexed | 2024-03-06T15:43:35Z |
| format | Conference or Workshop Item |
| id | usm.eprints-49045 |
| institution | Universiti Sains Malaysia |
| language | English |
| last_indexed | 2024-03-06T15:43:35Z |
| publishDate | 2020 |
| record_format | dspace |
| spelling | usm.eprints-490452021-04-28T03:10:07Z http://eprints.usm.my/49045/ Effect Of Nucleation Time On GaN Layer Grown On Different Shape Of Patterned Sapphire Substrate Taib, Muhamad Ikram Md Zaini, Siti Nurul Waheeda Mohmad Zainal, Norzaini QC1-999 Physics This work describes the effect of nucleation time on GaN layer; which was grown separately on three different shape of patterned sapphire substrate (PSS); cone PSS and dome PSS. Prior to the GaN layer growth, a low temperature of GaN nucleation layer was initially grown at 40, 80 and 160 second. The nucleation islands became larger as the nucleation time was longer. Bigger islands promote better coalescence, while smaller islands showed otherwise. Besides, the GaN layer grown on bigger islands exhibit smoother surface. From XRD measurement, FWHM of the GaN peak decreased for longer nucleation time, indicating the benefit of bigger islands to reduce the dislocations in the layer through better coalescence. It was found that the GaN layer grown on dome-patterned substrate exhibits better quality than the one on cone-patterned substrate. The growth of GaN layer on flat sapphire was also performed for comparison. 2020-12-02 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/49045/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2050.pdf Taib, Muhamad Ikram Md and Zaini, Siti Nurul Waheeda Mohmad and Zainal, Norzaini (2020) Effect Of Nucleation Time On GaN Layer Grown On Different Shape Of Patterned Sapphire Substrate. In: 5th Meeting of Malaysia Nitrides Research Group (MNRG 2020), 1-2 December 2020. |
| spellingShingle | QC1-999 Physics Taib, Muhamad Ikram Md Zaini, Siti Nurul Waheeda Mohmad Zainal, Norzaini Effect Of Nucleation Time On GaN Layer Grown On Different Shape Of Patterned Sapphire Substrate |
| title | Effect Of Nucleation Time On GaN Layer
Grown On Different Shape Of Patterned Sapphire Substrate |
| title_full | Effect Of Nucleation Time On GaN Layer
Grown On Different Shape Of Patterned Sapphire Substrate |
| title_fullStr | Effect Of Nucleation Time On GaN Layer
Grown On Different Shape Of Patterned Sapphire Substrate |
| title_full_unstemmed | Effect Of Nucleation Time On GaN Layer
Grown On Different Shape Of Patterned Sapphire Substrate |
| title_short | Effect Of Nucleation Time On GaN Layer
Grown On Different Shape Of Patterned Sapphire Substrate |
| title_sort | effect of nucleation time on gan layer grown on different shape of patterned sapphire substrate |
| topic | QC1-999 Physics |
| url | http://eprints.usm.my/49045/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2050.pdf |
| work_keys_str_mv | AT taibmuhamadikrammd effectofnucleationtimeonganlayergrownondifferentshapeofpatternedsapphiresubstrate AT zainisitinurulwaheedamohmad effectofnucleationtimeonganlayergrownondifferentshapeofpatternedsapphiresubstrate AT zainalnorzaini effectofnucleationtimeonganlayergrownondifferentshapeofpatternedsapphiresubstrate |