Influence Of Etching Time On The Porous P-Type Gallium Nitride Using Alternating Current Photo-Assisted Electrochemical Etching Technique
The Theoretical And Experimental Study Of Porous P-Type Gallium Nitride (Gan) Is Discussed In This Work. Porous P-Type Gan Was Adequately Fabricated Using Alternating Current Photo-Assisted Electrochemical Etching Technique With Various Etching Times (10, 20, 30, And 60 Minutes) In Mixed Hydrofluori...
| Main Authors: | , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2020
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| Subjects: | |
| Online Access: | http://eprints.usm.my/49067/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2061.pdf |