Investigation Of Ni-Cu As Ohmic Contact On P-Type Gan_ Investigation Of Ni-Cu As Ohmic Contact On P-Type Gan_Investigation Of Ni-Cu As Ohmic Contact On P-Type Gan
Nowadays, wide band gap semiconductors like Gallium Nitride (GaN) are considered the most promising materials for the next generation of power electronic devices. The properties of GaN like wide band gap, high critical electric field and high thermal conductivity give the possibility to fabricate de...
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| Format: | Monograph |
| Language: | English |
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Universiti Sains Malaysia
2017
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| Online Access: | http://eprints.usm.my/52530/1/Investigation%20Of%20Ni-Cu%20As%20Ohmic%20Contact%20On%20P-Type%20Gan_%20Investigation%20Of%20Ni-Cu%20As%20Ohmic%20Contact%20On%20P-Type%20Gan_Investigation%20Of%20Ni-Cu%20As%20Ohmic%20Contact%20On%20P-Type%20Gan_Koe%20Mei%20Yen_B1_2017.pdf |