High Resistivity Silicon- Deep-Level Doping Compensation Using Elemental Gold
The rapid development of high speed devices increases the need for high resistivity substrate to improve noise isolation. The traditional method of using III-V semiconductor material for the substrate is associated with the problem of fabrication cost and complexity. Alternative solution such as sil...
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| Format: | Monograph |
| Language: | English |
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Universiti Sains Malaysia
2017
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| Online Access: | http://eprints.usm.my/53152/1/High%20Resistivity%20Silicon-%20Deep-Level%20Doping%20Compensation%20Using%20Elemental%20Gold_Lew%20Yit%20Shien_E3_2017.pdf |