Investigation Of Boron Spin On Dopant On SOI Wafer
In this research, works were focused on the doping technique of p-type SOI wafers by using thermal diffusion process. The aim of this research was to prepare doped of p-type SOI wafer by SOD with boron dopant. This method is used to provide an impurity source for SOI wafer. The dopant was first sp...
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| Format: | Monograph |
| Language: | English |
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Universiti Sains Malaysia
2022
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| Online Access: | http://eprints.usm.my/56433/1/Investigation%20Of%20Boron%20Spin%20On%20Dopant%20On%20Soi%20Wafer_Aishah%20Shamimi%20Bahaudin.pdf |