Band anti-crossing modelling on tailored ga1-xinxnyas1-y band gap energy based nitrogen fraction

This paper deals with a Band Anti-Crossing (BAC) modelling to investigate the tailoring of band gap energy of Ga1-xInxNyAs1-y alloy based on nitrogen fractions. Three different numerical methods have been adopted to estimate the extended state of conduction band (

Détails bibliographiques
Auteurs principaux: Abd Samad, Muhammad Izzuddin, Mohamad, Khairul Anuar, Nordin, Mohammad Syahmi, Nayan, Nafarizal, Alias, Afishah, Othman, Marinah, Boland-Thoms, Adrian, Vickers, Anthony John
Format: Article
Langue:English
Publié: Horizon Research Publishing Corporation 2019
Sujets:
Accès en ligne:http://eprints.uthm.edu.my/2183/1/AJ%202020%20%283%29.pdf