Band anti-crossing modelling on tailored ga1-xinxnyas1-y band gap energy based nitrogen fraction

Band anti-crossing modelling on tailored ga1-xinxnyas1-y band gap energy based nitrogen fraction

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This paper deals with a Band Anti-Crossing (BAC) modelling to investigate the tailoring of band gap energy of Ga1-xInxNyAs1-y alloy based on nitrogen fractions. Three different numerical methods have been adopted to estimate the extended state of conduction band (

Detalhes bibliográficos
Principais autores: Abd Samad, Muhammad Izzuddin, Mohamad, Khairul Anuar, Nordin, Mohammad Syahmi, Nayan, Nafarizal, Alias, Afishah, Othman, Marinah, Boland-Thoms, Adrian, Vickers, Anthony John
Formato: Artigo
Idioma:English
Publicado em: Horizon Research Publishing Corporation 2019
Assuntos:
TK7800-8360 Electronics
Acesso em linha:http://eprints.uthm.edu.my/2183/1/AJ%202020%20%283%29.pdf

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