Influences of InGaN quantum well thickness on the internal quantum efficiency for GaN LED visible Light communication
Nowadays, semiconductor lighting industry has been developed rapidly throughout the world. Light emitting diodes (LEDs) are known as a compound semiconductor device that can emit visible light when there is an electron current passed through it. In recent years, the group III – nitride semiconducto...
Main Authors: | , |
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Other Authors: | |
Format: | Book Section |
Language: | English |
Published: |
Penerbit UTHM
2020
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Subjects: | |
Online Access: | http://eprints.uthm.edu.my/2746/1/Ch05.pdf |