Deposition of ZnO-Al (AZO) thin films for optical properties

Zinc Oxide (ZnO) is an inorganic compound and it is doped with aluminum to increase its capabilities. Aluminum Zinc Oxide (AZO) thin films are semiconductor materials that have band gap energy of 3.3eV. Various method of deposition have been study to growth AZO thin films. It has been extensively...

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Main Authors: Hussin, R., Anuar, S. Z. S., Ibharim, S. A., Kamdi, Z., Ainuddin, A. R., Harun, Z.
Format: Conference or Workshop Item
Language:English
Published: 2021
Subjects:
Online Access:http://eprints.uthm.edu.my/2796/1/P12713_9c6d533035b070a3183aee92d4af5889.pdf
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author Hussin, R.
Anuar, S. Z. S.
Ibharim, S. A.
Kamdi, Z.
Ainuddin, A. R.
Harun, Z.
author_facet Hussin, R.
Anuar, S. Z. S.
Ibharim, S. A.
Kamdi, Z.
Ainuddin, A. R.
Harun, Z.
author_sort Hussin, R.
collection UTHM
description Zinc Oxide (ZnO) is an inorganic compound and it is doped with aluminum to increase its capabilities. Aluminum Zinc Oxide (AZO) thin films are semiconductor materials that have band gap energy of 3.3eV. Various method of deposition have been study to growth AZO thin films. It has been extensively use in solar cell application, display application, gas sensing purposes, and thin film transistors (TFTs). In this work, sol gel method and spin coating was used to deposited AZO thin films. The ZnO sol-gel were synthesized using zinc acetate dihydrate as precursor, isopropanol as solvent, diethanolamine as sol stabilizer, and distilled water as oxidation agent. Then, synthesized ZnO were doped with different mole ratio of aluminum nitrate nanohydrate to produced AZO. The glass substrate was used as substrate and AZO thin films were then calcinated at 300°C and 500°C. The characterization of AZO thin film were done using X-ray Diffraction (XRD), Atomic Force Microscopy (AFM), Ultraviolet-visible spectroscopy (UV-Vis), Field Emission Scanning Electron Microscope (FESEM), and Energy Dispersive X-ray spectroscopy (EDX). The XRD results show that the ZnO with hexagonal wurtzite-type structure and temperature does have effect on the film intensity which related to crystallinity of thin films. Through AFM analysis, the value of RMS decreases from 3.018 nm to 2.240 nm as the temperature increases. Meanwhile, from UV-Vis result, it can be seen that AZO thin film have a high transmittance percentage above 90% after wavelength 400 nm with band gap value of 3.3 eV. FESEM image show that the grain boundary of AZO decrease with both parameter (mole ratio and calcinations temperature). Both parameters do have effect on AZO thin film. EDX analysis shows that there are existence of zinc, oxide, and aluminum.
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spelling uthm.eprints-27962021-10-25T09:43:59Z http://eprints.uthm.edu.my/2796/ Deposition of ZnO-Al (AZO) thin films for optical properties Hussin, R. Anuar, S. Z. S. Ibharim, S. A. Kamdi, Z. Ainuddin, A. R. Harun, Z. TS200-770 Metal manufactures. Metalworking Zinc Oxide (ZnO) is an inorganic compound and it is doped with aluminum to increase its capabilities. Aluminum Zinc Oxide (AZO) thin films are semiconductor materials that have band gap energy of 3.3eV. Various method of deposition have been study to growth AZO thin films. It has been extensively use in solar cell application, display application, gas sensing purposes, and thin film transistors (TFTs). In this work, sol gel method and spin coating was used to deposited AZO thin films. The ZnO sol-gel were synthesized using zinc acetate dihydrate as precursor, isopropanol as solvent, diethanolamine as sol stabilizer, and distilled water as oxidation agent. Then, synthesized ZnO were doped with different mole ratio of aluminum nitrate nanohydrate to produced AZO. The glass substrate was used as substrate and AZO thin films were then calcinated at 300°C and 500°C. The characterization of AZO thin film were done using X-ray Diffraction (XRD), Atomic Force Microscopy (AFM), Ultraviolet-visible spectroscopy (UV-Vis), Field Emission Scanning Electron Microscope (FESEM), and Energy Dispersive X-ray spectroscopy (EDX). The XRD results show that the ZnO with hexagonal wurtzite-type structure and temperature does have effect on the film intensity which related to crystallinity of thin films. Through AFM analysis, the value of RMS decreases from 3.018 nm to 2.240 nm as the temperature increases. Meanwhile, from UV-Vis result, it can be seen that AZO thin film have a high transmittance percentage above 90% after wavelength 400 nm with band gap value of 3.3 eV. FESEM image show that the grain boundary of AZO decrease with both parameter (mole ratio and calcinations temperature). Both parameters do have effect on AZO thin film. EDX analysis shows that there are existence of zinc, oxide, and aluminum. 2021 Conference or Workshop Item PeerReviewed text en http://eprints.uthm.edu.my/2796/1/P12713_9c6d533035b070a3183aee92d4af5889.pdf Hussin, R. and Anuar, S. Z. S. and Ibharim, S. A. and Kamdi, Z. and Ainuddin, A. R. and Harun, Z. (2021) Deposition of ZnO-Al (AZO) thin films for optical properties. In: Proceedings of Green Design and Manufacture 2020, 23–24 July 2020, Arau, Malaysia. https://doi.org/10.1063/5.0044520
spellingShingle TS200-770 Metal manufactures. Metalworking
Hussin, R.
Anuar, S. Z. S.
Ibharim, S. A.
Kamdi, Z.
Ainuddin, A. R.
Harun, Z.
Deposition of ZnO-Al (AZO) thin films for optical properties
title Deposition of ZnO-Al (AZO) thin films for optical properties
title_full Deposition of ZnO-Al (AZO) thin films for optical properties
title_fullStr Deposition of ZnO-Al (AZO) thin films for optical properties
title_full_unstemmed Deposition of ZnO-Al (AZO) thin films for optical properties
title_short Deposition of ZnO-Al (AZO) thin films for optical properties
title_sort deposition of zno al azo thin films for optical properties
topic TS200-770 Metal manufactures. Metalworking
url http://eprints.uthm.edu.my/2796/1/P12713_9c6d533035b070a3183aee92d4af5889.pdf
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