Effect of etching as pre-treatment for electroless copper plating on silicon wafer
Metallic coatings, such as copper films can be easily deposited on semiconductor materials like silicon wafer without prior surface pre-treatment using the electroless process. However, the adhesion of the copper film can be very weak and can easily peels off. In this study, the effect of etching in...
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| Format: | Article |
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Penerbit UTM Press
2017
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| _version_ | 1825710048303644672 |
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| author | Mior Shahidina, Shazatul Akmaliah Fadila, Nor Akmal Yusopa, Mohd Zamri Tamina, Mohd Nasir Osman, Saliza Azlina |
| author_facet | Mior Shahidina, Shazatul Akmaliah Fadila, Nor Akmal Yusopa, Mohd Zamri Tamina, Mohd Nasir Osman, Saliza Azlina |
| author_sort | Mior Shahidina, Shazatul Akmaliah |
| collection | UTHM |
| description | Metallic coatings, such as copper films can be easily deposited on semiconductor materials like silicon wafer without prior surface pre-treatment using the electroless process. However, the adhesion of the copper film can be very weak and can easily peels off. In this study, the effect of etching in hydrofluoric acid solution as a surface pre-treatment prior to electroless plating on silicon wafer was studied. The etching time in hydrofluoric acid was varied at 1, 3 and 5 minutes in order to investigate the adhesion behaviour of the coating layer. The surface morphology of the electroless plated samples was observed using a field emission scanning electron microscope (FESEM) and the coating thickness was measured using cross sectional analysis. The results showed that longer etching time (5 minutes) produced thicker Cu deposits (8.5μm) than 1 minute etching time (5μm). In addition, by increasing the etching time, the mechanical bonding between the copper film and the substrate is improved. |
| first_indexed | 2024-03-05T21:51:41Z |
| format | Article |
| id | uthm.eprints-5600 |
| institution | Universiti Tun Hussein Onn Malaysia |
| last_indexed | 2024-03-05T21:51:41Z |
| publishDate | 2017 |
| publisher | Penerbit UTM Press |
| record_format | dspace |
| spelling | uthm.eprints-56002022-01-17T01:57:02Z http://eprints.uthm.edu.my/5600/ Effect of etching as pre-treatment for electroless copper plating on silicon wafer Mior Shahidina, Shazatul Akmaliah Fadila, Nor Akmal Yusopa, Mohd Zamri Tamina, Mohd Nasir Osman, Saliza Azlina T Technology (General) TP155-156 Chemical engineering Metallic coatings, such as copper films can be easily deposited on semiconductor materials like silicon wafer without prior surface pre-treatment using the electroless process. However, the adhesion of the copper film can be very weak and can easily peels off. In this study, the effect of etching in hydrofluoric acid solution as a surface pre-treatment prior to electroless plating on silicon wafer was studied. The etching time in hydrofluoric acid was varied at 1, 3 and 5 minutes in order to investigate the adhesion behaviour of the coating layer. The surface morphology of the electroless plated samples was observed using a field emission scanning electron microscope (FESEM) and the coating thickness was measured using cross sectional analysis. The results showed that longer etching time (5 minutes) produced thicker Cu deposits (8.5μm) than 1 minute etching time (5μm). In addition, by increasing the etching time, the mechanical bonding between the copper film and the substrate is improved. Penerbit UTM Press 2017 Article PeerReviewed Mior Shahidina, Shazatul Akmaliah and Fadila, Nor Akmal and Yusopa, Mohd Zamri and Tamina, Mohd Nasir and Osman, Saliza Azlina (2017) Effect of etching as pre-treatment for electroless copper plating on silicon wafer. Jurnal Teknologi (Sciences & Engineering), 79 (7). pp. 61-69. ISSN 0127-9696 |
| spellingShingle | T Technology (General) TP155-156 Chemical engineering Mior Shahidina, Shazatul Akmaliah Fadila, Nor Akmal Yusopa, Mohd Zamri Tamina, Mohd Nasir Osman, Saliza Azlina Effect of etching as pre-treatment for electroless copper plating on silicon wafer |
| title | Effect of etching as pre-treatment for electroless copper plating on silicon wafer |
| title_full | Effect of etching as pre-treatment for electroless copper plating on silicon wafer |
| title_fullStr | Effect of etching as pre-treatment for electroless copper plating on silicon wafer |
| title_full_unstemmed | Effect of etching as pre-treatment for electroless copper plating on silicon wafer |
| title_short | Effect of etching as pre-treatment for electroless copper plating on silicon wafer |
| title_sort | effect of etching as pre treatment for electroless copper plating on silicon wafer |
| topic | T Technology (General) TP155-156 Chemical engineering |
| work_keys_str_mv | AT miorshahidinashazatulakmaliah effectofetchingaspretreatmentforelectrolesscopperplatingonsiliconwafer AT fadilanorakmal effectofetchingaspretreatmentforelectrolesscopperplatingonsiliconwafer AT yusopamohdzamri effectofetchingaspretreatmentforelectrolesscopperplatingonsiliconwafer AT taminamohdnasir effectofetchingaspretreatmentforelectrolesscopperplatingonsiliconwafer AT osmansalizaazlina effectofetchingaspretreatmentforelectrolesscopperplatingonsiliconwafer |