Dopant concentrations analysis on electro-optic performances of gallium nitride-based ultraviolet light-emitting diode chip
A high dopant concentration significantly reduces the peak current of the internal quantum efficiency (IQE) of the light-emitting diode (LED). The effect of the dopant concentration on the epitaxial layer toward the IQE, current density, and IQE droop of gallium nitride (GaN)-based LED chip is analy...
| Main Authors: | , , , , , |
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| Format: | Article |
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Society of Photo-Optical Instrumentation Engineers (SPIE)
2023
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