Improved characteristics of radio frequency interdigital capacitor

Technology advances in complimentary-metal-oxide-silicon (CMOS) process offer some interesting possibilities for radio frequency (RF) circuit designers. Some circuits that would have to be done with GaAs monolithic microwave integrated circuits (MMICs), for instance, are now possible in CMOS. While...

Täydet tiedot

Bibliografiset tiedot
Päätekijä: Lim, Yun Rou
Aineistotyyppi: Opinnäyte
Kieli:English
Julkaistu: 2006
Aiheet:
Linkit:http://eprints.utm.my/107/1/LimYunRouMFKE2006.pdf