Photoluminescence Studies of In0.5Ga0.5As/GaAs quantum dots
In this paper, we present an experiment study of the photoluminescence properties of self-assembled In0.5sGa0.5As/GaAs quantum dots (aDs). High quality In0.5Ga0.5As aDs were grown by using Metalorganic Chemical Vapor Deposition (MOCVD). The low temperature photoluminescence (PL) spectrum of the Ino....
| Main Authors: | , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2006
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| Subjects: | |
| Online Access: | http://eprints.utm.my/10834/1/YussofWahab2006_PhotolumnescenceStudiesofInGaAsGaAs.pdf |