Performance analysis of 14nm SOI-based Trigate Gaussian Channel Junctionless FinFET with punchthrough stop layer
In this paper, 14nm Silicon-On-Insulator-based Gaussian Channel Junctionless FinFET is presented. The gate length of 14nm is considered along with an Equivalent Oxide Thickness (EOT) of 1nm, 5nm as fin width, and the work function of the gate metal is 4.75eV. The device architecture has a non-unifor...
| Main Authors: | , , , , , |
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| Format: | Conference or Workshop Item |
| Published: |
2023
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| Subjects: |