Investigation on the effects of oblique rotating ion implantation (ORI) for nanoscale vertical double gate NMOSFET
A process of making a symmetrical self-aligned n-type vertical double-gate MOSFET (n-VDGM) over a silicon pillar is revealed. This process utilizes the technique of oblique rotating ion implantation (ORI). The self-aligned region forms a sharp vertical channel profile and decreases the channel lengt...
| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Published: |
2007
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| Subjects: |