Extraction of SPICE model for double gate vertical MOSFET
Vertical MOSFETs device have one important disadvantage, which is higher overlap capacitances such as the separated gate-source and gate-drain parasitic capacitances (CGSO and CGDO), which is known to be most crucial to the high-frequency/speed performance but very hard to extract. In this paper pre...
| Main Authors: | , , , |
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| Format: | Book Section |
| Published: |
IEEE
2009
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| Subjects: |