Microwave characterization of silicon wafer using rectangular dielectric waveguide
A non-destructive and easy to use method is presented to characterize p-type and n-type silicon semiconductor wafers using a rectangular dielectric waveguide measurement (RDWG) system. The measurement system consists of a vector network analyzer (VNA), a pair of coaxial cable, coaxial to waveguide a...
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IEEE
2005
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author | Ismail, Kamariah Baba, Noor Hasimah Awang, Zaiki Esa, Mazlina |
author_facet | Ismail, Kamariah Baba, Noor Hasimah Awang, Zaiki Esa, Mazlina |
author_sort | Ismail, Kamariah |
collection | ePrints |
description | A non-destructive and easy to use method is presented to characterize p-type and n-type silicon semiconductor wafers using a rectangular dielectric waveguide measurement (RDWG) system. The measurement system consists of a vector network analyzer (VNA), a pair of coaxial cable, coaxial to waveguide adapter and dielectric-filled standard gain horn antenna. In this method, the reflection and transmission coefficients, S11 and S21 were measured for silicon wafer sandwiched between the two Teflon, the dielectric that filled the standard gain horn antenna. It was observed that, the dielectric constant of the silicon wafers are relatively constant, varying slightly over the frequency range of 9 to 12 GHz. The loss factor, loss tangent and conductivity of the doped wafers are higher than the undoped type. |
first_indexed | 2024-03-05T18:38:22Z |
format | Book Section |
id | utm.eprints-25765 |
institution | Universiti Teknologi Malaysia - ePrints |
last_indexed | 2024-03-05T18:38:22Z |
publishDate | 2005 |
publisher | IEEE |
record_format | dspace |
spelling | utm.eprints-257652018-11-30T06:22:48Z http://eprints.utm.my/25765/ Microwave characterization of silicon wafer using rectangular dielectric waveguide Ismail, Kamariah Baba, Noor Hasimah Awang, Zaiki Esa, Mazlina TK Electrical engineering. Electronics Nuclear engineering A non-destructive and easy to use method is presented to characterize p-type and n-type silicon semiconductor wafers using a rectangular dielectric waveguide measurement (RDWG) system. The measurement system consists of a vector network analyzer (VNA), a pair of coaxial cable, coaxial to waveguide adapter and dielectric-filled standard gain horn antenna. In this method, the reflection and transmission coefficients, S11 and S21 were measured for silicon wafer sandwiched between the two Teflon, the dielectric that filled the standard gain horn antenna. It was observed that, the dielectric constant of the silicon wafers are relatively constant, varying slightly over the frequency range of 9 to 12 GHz. The loss factor, loss tangent and conductivity of the doped wafers are higher than the undoped type. IEEE 2005 Book Section PeerReviewed Ismail, Kamariah and Baba, Noor Hasimah and Awang, Zaiki and Esa, Mazlina (2005) Microwave characterization of silicon wafer using rectangular dielectric waveguide. In: RF and Microwave Conference, 2006. RFM 2006. International. IEEE, Putrajaya, 411 -415. ISBN 0-7803-9745-2 http://dx.doi.org/10.1109/RFM.2006.331116 10.1109/RFM.2006.331116 |
spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Ismail, Kamariah Baba, Noor Hasimah Awang, Zaiki Esa, Mazlina Microwave characterization of silicon wafer using rectangular dielectric waveguide |
title | Microwave characterization of silicon wafer using rectangular dielectric waveguide |
title_full | Microwave characterization of silicon wafer using rectangular dielectric waveguide |
title_fullStr | Microwave characterization of silicon wafer using rectangular dielectric waveguide |
title_full_unstemmed | Microwave characterization of silicon wafer using rectangular dielectric waveguide |
title_short | Microwave characterization of silicon wafer using rectangular dielectric waveguide |
title_sort | microwave characterization of silicon wafer using rectangular dielectric waveguide |
topic | TK Electrical engineering. Electronics Nuclear engineering |
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