Modeling and Characterization of Majority (MAJ) type Single-Electron Full Adder using SIMON
Single Electron Transistor (SET), distinguished by a very small device size and low power dissipation, is one of the most promising nanoelectronic devices to replace conventional CMOS. It is based on controlling the transport of an individual electron. This paper focuses on the modeling and characte...
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Penerbit UTM Press
2010
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