Morphology and optical properties of self-assembled in0.5Ga 0.5as quantum dots with different spacer layer thickness
Uncapped double stacked In0.5Ga0.5As quantum dots (QDs) with different spacer layer thicknesses were grown using metal-organic chemical vapour deposition (MOCVD). The precursors used for the growth of the GaAs layer and In0.5Ga0.5As QDs were trimethylgallium (TMGa), trimethylindium (TMIn), and arsin...
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| Format: | Article |
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Elsevier B.V.
2010
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