The sensing performance of hydrogen gas sensor utilizing undoped-AlGaN/GaN HEMT (a)
High temperature operation and long term stability are important requirements for gas sensor. The response of Pt-circular Schottky diodes fabricated on undoped AlGaN/GaN high-electron-mobility-transistor (HEMT) structure to hydrogen gas at various temperatures, ranging from 25 to 200°C has been inve...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Published: |
Asian Network for Scientific Information
2010
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| Subjects: |