The sensing performance of hydrogen gas sensor utilizing undoped-AlGaN/GaN HEMT (a)

The sensing performance of hydrogen gas sensor utilizing undoped-AlGaN/GaN HEMT (a)

High temperature operation and long term stability are important requirements for gas sensor. The response of Pt-circular Schottky diodes fabricated on undoped AlGaN/GaN high-electron-mobility-transistor (HEMT) structure to hydrogen gas at various temperatures, ranging from 25 to 200°C has been inve...

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Bibliographic Details
Main Authors:	Mohamad, Mazuina, Mustafa, Farahiyah, Abd. Rahman, Shaharin Fadzli, Zainal Abidin, Mastura Shafinaz, Al-Obaidi, N. K. A., Hashim, Abd. Manaf, Abdul Aziz, Azlan, Hashim, Md. Roslan
Format:	Article
Published:	Asian Network for Scientific Information 2010
Subjects:	TK Electrical engineering. Electronics Nuclear engineering

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