A model for length of saturation velocity region in double-gate graphene nanoribbon transistors
Length of saturation region (LVSR) as an important parameter in nanoscale devices, which controls the drain breakdown voltage is in our focus. This paper presents three models for surface potential, surface electric field and LVSR in double-gate Graphene nanoribbon transistors. The Poisson equation...
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| Format: | Article |
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Elsevier Limited
2011
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