A model for length of saturation velocity region in double-gate graphene nanoribbon transistors
Length of saturation region (LVSR) as an important parameter in nanoscale devices, which controls the drain breakdown voltage is in our focus. This paper presents three models for surface potential, surface electric field and LVSR in double-gate Graphene nanoribbon transistors. The Poisson equation...
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| Format: | Article |
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Elsevier Limited
2011
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| author | Ghadiry, Mahdiar Hossein Nadi S., M. Ahmadi, Mohammad Taghi Abd. Manaf, Asrulnizam |
| author_facet | Ghadiry, Mahdiar Hossein Nadi S., M. Ahmadi, Mohammad Taghi Abd. Manaf, Asrulnizam |
| author_sort | Ghadiry, Mahdiar Hossein |
| collection | ePrints |
| description | Length of saturation region (LVSR) as an important parameter in nanoscale devices, which controls the drain breakdown voltage is in our focus. This paper presents three models for surface potential, surface electric field and LVSR in double-gate Graphene nanoribbon transistors. The Poisson equation is used to derive surface potential, lateral electric field and LVSR. Using the proposed models, the effect of several parameters such as drain-source voltage, oxide thickness, doping concentration and channel length on the LVSR is studied. |
| first_indexed | 2024-03-05T18:42:30Z |
| format | Article |
| id | utm.eprints-28584 |
| institution | Universiti Teknologi Malaysia - ePrints |
| last_indexed | 2024-03-05T18:42:30Z |
| publishDate | 2011 |
| publisher | Elsevier Limited |
| record_format | dspace |
| spelling | utm.eprints-285842019-01-28T03:35:21Z http://eprints.utm.my/28584/ A model for length of saturation velocity region in double-gate graphene nanoribbon transistors Ghadiry, Mahdiar Hossein Nadi S., M. Ahmadi, Mohammad Taghi Abd. Manaf, Asrulnizam TK Electrical engineering. Electronics Nuclear engineering Length of saturation region (LVSR) as an important parameter in nanoscale devices, which controls the drain breakdown voltage is in our focus. This paper presents three models for surface potential, surface electric field and LVSR in double-gate Graphene nanoribbon transistors. The Poisson equation is used to derive surface potential, lateral electric field and LVSR. Using the proposed models, the effect of several parameters such as drain-source voltage, oxide thickness, doping concentration and channel length on the LVSR is studied. Elsevier Limited 2011-12 Article PeerReviewed Ghadiry, Mahdiar Hossein and Nadi S., M. and Ahmadi, Mohammad Taghi and Abd. Manaf, Asrulnizam (2011) A model for length of saturation velocity region in double-gate graphene nanoribbon transistors. Microelectronics Reliability, 51 (12). pp. 2143-2146. ISSN 0026-2714 http://dx.doi.org/10.1016/j.microrel.2011.07.009 DOI:10.1016/j.microrel.2011.07.009 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Ghadiry, Mahdiar Hossein Nadi S., M. Ahmadi, Mohammad Taghi Abd. Manaf, Asrulnizam A model for length of saturation velocity region in double-gate graphene nanoribbon transistors |
| title | A model for length of saturation velocity region in double-gate graphene nanoribbon transistors |
| title_full | A model for length of saturation velocity region in double-gate graphene nanoribbon transistors |
| title_fullStr | A model for length of saturation velocity region in double-gate graphene nanoribbon transistors |
| title_full_unstemmed | A model for length of saturation velocity region in double-gate graphene nanoribbon transistors |
| title_short | A model for length of saturation velocity region in double-gate graphene nanoribbon transistors |
| title_sort | model for length of saturation velocity region in double gate graphene nanoribbon transistors |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
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