Band structure properties of novel BxGa1-xP alloys for silicon integration
We have grown and investigated the band-structure properties of novel III-V alloys based upon BxGa1-xP. These layers are utilized as strain-compensating layers for the lattice-matched integration of novel direct bandgap Ga(NAsP) quantum well lasers on silicon. Experimental and theoretical studies re...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Published: |
American Institute of Physics
2011
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