Influence of body-tied and floating-body structure in double gate vertical n-MOSFET
The body-tied, BT DGVMOS and floating-body, FB DGVMOS devices have become an alternative solution for controlling short channel effects (SCEs). The influence of both structures in Double-Gate Vertical MOSFET (DG VMOS) will affect the device performance. For this purpose, both device structures, body...
| Main Authors: | , , , |
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| Format: | Book Section |
| Published: |
American Institute of Physics Inc.
2011
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| Subjects: |