The growth mechanism of silicon nanodots synthesized by sputtering method

Silicon quantum dots have been grown on sapphire substrate using a self-assembly method of physical vapour deposition. The samples were fabricated at low sputtering rate and varying experimental conditions. Apparently, the onset of nucleation took place during the first 5 minutes of deposition, foll...

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Bibliographic Details
Main Authors: Sakrani, Samsudi, Othaman, Zulkafli, Ismail, Abd. Khamim
Format: Book Section
Published: American Institute of Physics 2011
Subjects: