Room temperature Ge and ZnO embedded inside porous silicon using conventional methods for photonic application
In this paper we reported room temperature synthesis of embedded porous Si (PS) based structures using simple and low cost techniques of electrochemical etching and thermal evaporation. PS was prepared by anodization of Si wafer in ethanoic hydrofluoric acid (HF). The Ge and ZnO layers were deposite...
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| Format: | Article |
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Elsevier
2012
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