The electronic band structure of GaBiAs/GaAs layers: influence of strain and band anti-crossing
The GaBixAs1-x bismide III-V semiconductor system remains a relatively underexplored alloy particularly with regards to its detailed electronic band structure. Of particular importance to understanding the physics of this system is how the bandgap energy E-g and spin-orbit splitting energy Delta(o)...
| Main Authors: | , , , , , |
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| Format: | Article |
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AIP Publishing
2012
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