Two dimensional analytical threshold voltage model of nanoscale strained Si/Si1-xGex MOSFETs including quantum mechanical effects
A new analytical model derived from the Poisson equation for surface potential and threshold voltage (V th), including the Quantum Mechanical Effects (QMEs) is presented for nanoscale strained Si1–x Ge x MOSFETs. Boundary condition approaches are applied in the model. The threshold voltage analytica...
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| Format: | Article |
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Amer Scientific Publishers
2012
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