Two dimensional analytical threshold voltage model of nanoscale strained Si/Si1-xGex MOSFETs including quantum mechanical effects
A new analytical model derived from the Poisson equation for surface potential and threshold voltage (V th), including the Quantum Mechanical Effects (QMEs) is presented for nanoscale strained Si1–x Ge x MOSFETs. Boundary condition approaches are applied in the model. The threshold voltage analytica...
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| Format: | Article |
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Amer Scientific Publishers
2012
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| _version_ | 1796857289500524544 |
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| author | Siew, Kang Eng Heong, Yau Wei Anwar, Sohail Razali, Ismail |
| author_facet | Siew, Kang Eng Heong, Yau Wei Anwar, Sohail Razali, Ismail |
| author_sort | Siew, Kang Eng |
| collection | ePrints |
| description | A new analytical model derived from the Poisson equation for surface potential and threshold voltage (V th), including the Quantum Mechanical Effects (QMEs) is presented for nanoscale strained Si1–x Ge x MOSFETs. Boundary condition approaches are applied in the model. The threshold voltage analytical model is developed using 20% germanium content in Si1–x Ge x substrates. The model is developed to investigate the quantum mechanical effects on the magnitude of surface potential and threshold voltage. The impacts of strain and quantum confinement on the shift of threshold voltage are explained. Our threshold voltage model incorporates the quantum oxide thickness and the effective flatband voltage. For the validation purpose, the developed threshold model is verified using 2D ATLAS simulation results. The results obtained from the developed model have a good agreement with the simulation results. Both the analytical and the simulation results demonstrate a significant increase of threshold voltage in strained silicon considering the quantum mechanical effects. |
| first_indexed | 2024-03-05T18:55:27Z |
| format | Article |
| id | utm.eprints-33933 |
| institution | Universiti Teknologi Malaysia - ePrints |
| last_indexed | 2024-03-05T18:55:27Z |
| publishDate | 2012 |
| publisher | Amer Scientific Publishers |
| record_format | dspace |
| spelling | utm.eprints-339332017-02-15T00:20:21Z http://eprints.utm.my/33933/ Two dimensional analytical threshold voltage model of nanoscale strained Si/Si1-xGex MOSFETs including quantum mechanical effects Siew, Kang Eng Heong, Yau Wei Anwar, Sohail Razali, Ismail TK Electrical engineering. Electronics Nuclear engineering A new analytical model derived from the Poisson equation for surface potential and threshold voltage (V th), including the Quantum Mechanical Effects (QMEs) is presented for nanoscale strained Si1–x Ge x MOSFETs. Boundary condition approaches are applied in the model. The threshold voltage analytical model is developed using 20% germanium content in Si1–x Ge x substrates. The model is developed to investigate the quantum mechanical effects on the magnitude of surface potential and threshold voltage. The impacts of strain and quantum confinement on the shift of threshold voltage are explained. Our threshold voltage model incorporates the quantum oxide thickness and the effective flatband voltage. For the validation purpose, the developed threshold model is verified using 2D ATLAS simulation results. The results obtained from the developed model have a good agreement with the simulation results. Both the analytical and the simulation results demonstrate a significant increase of threshold voltage in strained silicon considering the quantum mechanical effects. Amer Scientific Publishers 2012-03 Article PeerReviewed Siew, Kang Eng and Heong, Yau Wei and Anwar, Sohail and Razali, Ismail (2012) Two dimensional analytical threshold voltage model of nanoscale strained Si/Si1-xGex MOSFETs including quantum mechanical effects. Journal of Computational and Theoretical Nanoscience, 9 (3). pp. 441-447. ISSN 1546-1955 http://dx.doi.org/10.1166/jctn.2012.2044 10.1166/jctn.2012.2044 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Siew, Kang Eng Heong, Yau Wei Anwar, Sohail Razali, Ismail Two dimensional analytical threshold voltage model of nanoscale strained Si/Si1-xGex MOSFETs including quantum mechanical effects |
| title | Two dimensional analytical threshold voltage model of nanoscale strained Si/Si1-xGex MOSFETs including quantum mechanical effects |
| title_full | Two dimensional analytical threshold voltage model of nanoscale strained Si/Si1-xGex MOSFETs including quantum mechanical effects |
| title_fullStr | Two dimensional analytical threshold voltage model of nanoscale strained Si/Si1-xGex MOSFETs including quantum mechanical effects |
| title_full_unstemmed | Two dimensional analytical threshold voltage model of nanoscale strained Si/Si1-xGex MOSFETs including quantum mechanical effects |
| title_short | Two dimensional analytical threshold voltage model of nanoscale strained Si/Si1-xGex MOSFETs including quantum mechanical effects |
| title_sort | two dimensional analytical threshold voltage model of nanoscale strained si si1 xgex mosfets including quantum mechanical effects |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
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