Effects of S/D doping concentrations on vertical strained-sige impact ionization MOSFET incorporating dielectric pocket (VESIMOS-DP)
The Vertical Strained Silicon Germanium (SiGe) Impact Ionization MOSFET with Dielectric Pocket (VESIMOS-DP) has been successfully developed and analyzed in this paper. The effect of Source and Drain (S/D) doping concentration to the VESIMOS-DP on the performance of the device in terms of subthreshol...
| Main Authors: | , , , , , , |
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| Format: | Conference or Workshop Item |
| Published: |
2013
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| Subjects: |