Characterization of ge nanostructures embedded inside porous silicon for photonics application
In this work we prepared germanium nanostructures by means of filling the material inside porous silicon (PS) using conventional and cost effective technique, thermal evaporator. The PS acts as patterned substrate. It was prepared by anodization of silicon wafer in ethanoic hydrofluoric acid (HF). A...
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Penerbit Universiti Kebangsaan Malaysia
2011
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